The first domestic new generation large-scale integrated circuit silicon single crystal growth equipment was successfully trial-produced

On December 23, the first domestic new-generation large-scale integrated circuit silicon single crystal growth equipment jointly developed by Xi’an University of Technology and Xi’an Yisiwei Equipment Technology Co., Ltd. achieved a successful trial production in Xi’an.

According to Science and Technology Daily, since 2018, the team of Professor Liu Ding of Xi’an University of Technology and Xi’an Yi Siwei have established a close cooperative relationship to promote the transformation of achievements and support the development of the industry. The two parties will give full play to their respective technological innovation and market advantages, aiming to develop a new generation of large-scale integrated circuit silicon single crystal growth equipment and core processes, and carry out technical research in response to the requirements of 7-20nm integrated circuit Chips.

The silicon single crystal growth equipment jointly developed by the two parties for industrial application has successfully grown high-quality silicon single crystal materials with a diameter of 300mm and a length of 2100mm in accordance with the requirements of integrated circuit silicon single crystal materials. It has achieved a major breakthrough in the successful production of large-scale, high-quality integrated circuit-level silicon single crystal materials using domestically-developed technical equipment and industrialization.

The achievement of this achievement has achieved the clear goal of mutual support between basic research and applied research, collaborative cooperation between industry, university and research, and solving major national needs, fully reflecting the transformation and application of major scientific and technological achievements, and in order to speed up the solution of the “stuck neck” problem in my country’s industrial development. Prominent role to provide strong support.

On December 23, the first domestic new-generation large-scale integrated circuit silicon single crystal growth equipment jointly developed by Xi’an University of Technology and Xi’an Yisiwei Equipment Technology Co., Ltd. achieved a successful trial production in Xi’an.

According to Science and Technology Daily, since 2018, the team of Professor Liu Ding of Xi’an University of Technology and Xi’an Yi Siwei have established a close cooperative relationship to promote the transformation of achievements and support the development of the industry. The two parties will give full play to their respective technological innovation and market advantages, aiming to develop a new generation of large-scale integrated circuit silicon single crystal growth equipment and core processes, and carry out technical research in response to the requirements of 7-20nm integrated circuit chips.

The silicon single crystal growth equipment jointly developed by the two parties for industrial application has successfully grown high-quality silicon single crystal materials with a diameter of 300mm and a length of 2100mm in accordance with the requirements of integrated circuit silicon single crystal materials. It has achieved a major breakthrough in the successful production of large-scale, high-quality integrated circuit-level silicon single crystal materials using domestically-developed technical equipment and industrialization.

The achievement of this achievement has achieved the clear goal of mutual support between basic research and applied research, collaborative cooperation between industry, university and research, and solving major national needs, fully reflecting the transformation and application of major scientific and technological achievements, and in order to speed up the solution of the “stuck neck” problem in my country’s industrial development. Prominent role to provide strong support.

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